? 2004 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c55v v dgr t j = 25 c to 175 c; r gs = 1 m ? 55 v v gsm 20 v i d25 t c = 25 c 110 a i drms external lead current limit 75 a i dm t c = 25 c, pulse width limited by t jm 250 a i ar t c = 25 c 110 a e ar t c = 25 c30mj e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 10 ? p d t c = 25 c 360 w t j -55 ... +175 c t jm 175 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c maximum tab temperature for soldering 260 c to-263 package for 10s m d mounting torque (to-3p / to-220) 1.13/10 nm/lb.in. weight to-3p 5.5 g to-220 4 g to-263 3 g g = gate d = drain s = source tab = drain ds99182(05/04) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a55v v gs(th) v ds = v gs , i d = 250 a 2.5 5.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 11 13.5 m ? pulse test, t 300 s, duty cycle d 2 % polarht tm power mosfet advanced technical information n-channel enhancement mode features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density polarht tm dmos transistors utilize proprietary designs and process. us patent is pending. to-3p (ixtq) to-263 (i xta ) to-220 (i xtp ) g d s (tab) d (tab) g s g s (tab) ixtq 110n055p ixta 110n055p ixtp 110n055p v dss = 55 v i d25 = 110 a r ds(on) = 13.5 m ? ? ? ? ?
ixys reserves the right to change limits, test conditions, and dimensions. ixta 110n055p ixtp 110n055p ixtq 110n055p ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 23 36 s c iss 2210 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1400 pf c rss 550 pf t d(on) 27 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 53 ns t d(off) r g = 10 ? (external) 66 ns t f 45 ns q g(on) 76 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 17 nc q gd 33 nc r thjc 0.42 k/w r thck (to-3p) 0.21 k/w (to-220) 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 110 a i sm repetitive 250 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a 120 ns -di/dt = 100 a/ s q rm v r = 25 v 1.4 c to-3p (ixtq) outline pins: 1 - gate 2 - drain to-220 (ixtp) outline dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 to-263 (ixta) outline
? 2004 ixys all rights reserved ixta 110n055p ixtp 110n055p ixtq 110n055p fig. 2. extended output characteristics @ 25 o c 0 20 40 60 80 100 120 140 160 180 200 220 012345678910 v d s - volts i d - amperes v gs = 10v 7v 6v 8v 9v 5v fig. 3. output characteristics @ 150 o c 0 10 20 30 40 50 60 70 80 90 100 110 0 0.4 0.8 1.2 1.6 2 2.4 2.8 v d s - volts i d - amperes v gs = 10v 9v 5v 6v 7v 8v fig. 1. output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 90 100 110 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v d s - volts i d - amperes v gs = 10v 9v 7v 5v 6v 8v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r d s ( o n ) - normalize d i d = 110a i d = 55a v gs = 10v fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. drain current 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 0 25 50 75 100 125 150 175 200 225 250 i d - amperes r d s ( o n ) - normalized t j = 25 o c v gs = 10v t j = 175 o c v gs = 15v
ixys reserves the right to change limits, test conditions, and dimensions. ixta 110n055p ixtp 110n055p ixtq 110n055p ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 fig. 11. capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 10 20304050 607080 q g - nanocoulombs v g s - volts v ds = 22.5v i d = 55a i g = 10ma fig. 7. input admittance 0 25 50 75 100 125 150 175 200 225 250 23 456 7891011 v g s - volts i d - amperes t j = -40 o c 25 o c 150 o c fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 0 50 100 150 200 250 300 i d - amperes g f s - siemens t j = -40 o c 25 o c 150 o c fig. 9. source current vs. source-to-drain voltage 0 50 100 150 200 250 300 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v s d - volts i s - amperes t j = 150 o c t j = 25 o c fig. 12. forw ard-bias safe operating area 10 100 1000 110100 v d s - volts i d - amperes 100s 1ms dc t j = 175 o c t c = 25 o c r ds(on) limit 10ms 25s
? 2004 ixys all rights reserved ixta 110n055p ixtp 110n055p ixtq 110n055p fig. 13. m axim um trans ie nt the rm al re s is tance 0.01 0.10 1.00 0.1 1 10 100 1000 pu ls e w id th - m illis e c o n d s r ( t h ) j c - oc / w
|
